These Silicon Carbide evaluation kits and reference designs are available to help design engineers overcome a variety of common challenges that arise in each stage of their project cycles.
- Study Silicon Carbide switching characteristics
- Characterize SiC devices on a per-cycle basis
- Measure switching energy, switching time, gate charge, and reverse recovery
- Design file downloads will be available soon. Kontakt SiC-Support for more information.
- Evaluate continuous operation of SiC power MOSFETs and diodes
- Compare the performance of different gate driver solutions
- Test gate driving circuit thermal performance and EMI immunity
- Design file downloads will be available soon. Kontakt SiC-Support for more information.