Enables high-frequency, high-efficiency power control applications such as electric and hybrid vehicles, datacenters, and auxiliary power supplies
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SiC MOSFET LSIC1MO170E1000
CHICAGO, September 24, 2018 — Littelfuse, Inc. today introduced its first 1700V SiC MOSFET, the LSIC1MO170E1000, expanding its portfolio of SiC MOSFET devices. An important addition to the Littelfuse SiC MOSFET product offering, the LSIC1MO170E1000 is a powerful addition to the company’s 1200V SiC MOSFETs and Schottky diodes already released. End-users will benefit from more compact, energy-efficient systems and also from a potential lower total cost of ownership.
High-efficiency benefits powered by SiC MOSFET technologies offer multiple advantages to many demanding applications including electric and hybrid vehicles, datacenters, and auxiliary power supplies. When compared to similarly-rated Si IGBTs, the LSIC1MO170E1000 SiC MOSFET enables a number of system level optimization opportunities, including increased efficiency, increased power density, decreased cooling requirements, and potentially lower system level costs.
Additionally, the Littelfuse SiC MOSFETs deliver on par or better performance in all aspects when compared head-to-head with other industry-leading SiC MOSFET devices on the market. Typical applications for the SiC MOSFET LSIC1MO170E1000 include:
- Solar-Umrichter
- Switch-mode and uninterruptible power supplies
- Motorantriebe
- DC/DC-Hochspannungswandler
"This product can improve existing applications, and the Littelfuse application support network can help new design-in projects," said Michael Ketterer, Global Product Marketing Manager, Power Semiconductors, Semiconductor Business Unit at Littelfuse. "SiC MOSFETs offer a rewarding alternative to traditional Si-based power transistor devices. The MOSFET device structure enables lower per-cycle switching losses and improved light load efficiency when compared to similarly-rated IGBTs. Inherent material properties allow the SiC MOSFET to outclass its Si MOSFET counterparts in terms of blocking voltage, specific on resistance, and junction capacitances."
The new 1700V, 1 Ohm SiC MOSFETs, available in a TO-247-3L package, offer these key benefits:
- Optimiert für hoch effiziente Hochfrequenzanwendungen
- Extrem niedrige Gate-Ladung und Output-Kapazität
- Niedriger Gate-Widerstand für Hochfrequenzschaltung
Verfügbarkeit
LSIC1MO170E1000 SiC MOSFETs are available in TO-247-3L packages in tubes in quantities of 450. Muster können weltweit über autorisierte Littelfuse Distributoren angefordert werden. Eine Liste der LittelfuseDistributoren finden Sie auf littelfuse.com.
For More Information:
Additional information is available on the LSIC1MO170E1000E SiC MOSFET product page.
For availability, initial pricing and general technical inquiry, please contact Michael Ketterer, Global Product Marketing Manager, Power Semiconductors, Semiconductor Business Unit at Littelfuse: mketterer@littelfuse.com.
For technical questions, please contact: Power Semi Hotline, powersemisupport@littelfuse.com.
Über Littelfuse
Littelfuse wurde 1927 gegründet und ist der weltweit führende Anbieter im Bereich Stromkreisschutz, mit stetig wachsenden weltweiten Plattformen für Leistungsregelung und -sensorik. Das Unternehmen bedient weltweit Kunden in den Märkten Elektronik, Automobil und Industrie mit Technologien wie Sicherungen, Halbleitern, Polymeren, Keramik, Schaltern und Sensoren. Das Unternehmen hat über 11.000 Mitarbeiter an mehr als 50 Standorten in Amerika, Europa und Asien. For more information, please visit Littelfuse.com.